p-channel enhancement mode vertical dmos fet issue 2 ? march 94 features * 200 volt v ds *r ds(on) =32 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -200 v continuous drain current at t amb =25c i d -110 ma pulsed drain current i dm -1 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -200 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -10 -100 m a m a v ds =-200 v, v gs =0 v ds =-160 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -250 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 32 w v gs =-10v,i d =-125ma forward transconductance (1)(2) g fs 50 ms v ds =-25v,i d =-125ma input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 25 pf v ds =-25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 7pf turn-on delay time (2)(3) t d(on) 7ns v dd ?- 25v, i d =-125ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns ( 1 ) measured under p ulsed conditions. width=300 m s. dut y c y cle 2% (2) sam p le test. e-line to92 compatible ZVP0120A 3-406 d g s typical characteristics output characteristics v ds - drain source voltage (volts) i d(o n ) -on-state drain current (amps) transfer characteristics normalised r ds(on) and v gs(th) vs temperature no r mal ise d r ds(on) and v g s(t h) -40 -20 0 20 40 60 80 120 100 140 160 drai n -s o u rc e r es i s tan c e r d s( o n ) ga t e t h r e s h o ld v o l t ag e v gs ( th ) i d=- 0.1a 0-1-2 -3 -4 -5-6 -7-8 -9-10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 saturation characteristics -14 -12 -10 -6 -2 0 -4 -8 -16 -18 0-1-2-3-4-5-6-7-8-9-10 -20 v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) -5v -4v -10v -5v i d= - 300ma -200ma -100ma i d( o n ) - on-state drain current (amps) v gs- gate source voltage (volts) v gs= -10v i d= -1ma v gs= v ds -0.7 -0.6 -0.4 -0.1 0 -0.2 -0.5 -0.3 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 2.6 180 v gs= -10v -7v -4.5v -6v -7v -4v -3.5v -8v v gs = -8v i d(o n ) -on-state drain current (amps) v ds - drain source voltage (volts) on-resistance vs gate-source voltage r ds(on) -drain source resistance ( w ) -1 -2 -3 -4 -5 -6 -7 -8 -9-10 100 50 -20 i d= -300ma -200ma -i00ma -6v -4.5v -3.5v -0.4 -0.3 -0.1 0 -0.2 -50ma 0-1-2 -3 -4 -5-6 -7-8 -9-10 -10v -0.7 -0.6 -0.4 -0.1 0 -0.2 -0.5 -0.3 v ds= -25v -50ma 10 v gs -gate source voltage (volts) temperature (c) ZVP0120A 3-407
p-channel enhancement mode vertical dmos fet issue 2 ? march 94 features * 200 volt v ds *r ds(on) =32 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -200 v continuous drain current at t amb =25c i d -110 ma pulsed drain current i dm -1 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -200 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -10 -100 m a m a v ds =-200 v, v gs =0 v ds =-160 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -250 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 32 w v gs =-10v,i d =-125ma forward transconductance (1)(2) g fs 50 ms v ds =-25v,i d =-125ma input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 25 pf v ds =-25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 7pf turn-on delay time (2)(3) t d(on) 7ns v dd ?- 25v, i d =-125ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns ( 1 ) measured under p ulsed conditions. width=300 m s. dut y c y cle 2% (2) sam p le test. e-line to92 compatible ZVP0120A 3-406 d g s typical characteristics output characteristics v ds - drain source voltage (volts) i d(o n ) -on-state drain current (amps) transfer characteristics normalised r ds(on) and v gs(th) vs temperature no r mal ise d r ds(on) and v g s(t h) -40 -20 0 20 40 60 80 120 100 140 160 drai n -s o u rc e r es i s tan c e r d s( o n ) ga t e t h r e s h o ld v o l t ag e v gs ( th ) i d=- 0.1a 0-1-2 -3 -4 -5-6 -7-8 -9-10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 saturation characteristics -14 -12 -10 -6 -2 0 -4 -8 -16 -18 0-1-2-3-4-5-6-7-8-9-10 -20 v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) -5v -4v -10v -5v i d= - 300ma -200ma -100ma i d( o n ) - on-state drain current (amps) v gs- gate source voltage (volts) v gs= -10v i d= -1ma v gs= v ds -0.7 -0.6 -0.4 -0.1 0 -0.2 -0.5 -0.3 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 2.6 180 v gs= -10v -7v -4.5v -6v -7v -4v -3.5v -8v v gs = -8v i d(o n ) -on-state drain current (amps) v ds - drain source voltage (volts) on-resistance vs gate-source voltage r ds(on) -drain source resistance ( w ) -1 -2 -3 -4 -5 -6 -7 -8 -9-10 100 50 -20 i d= -300ma -200ma -i00ma -6v -4.5v -3.5v -0.4 -0.3 -0.1 0 -0.2 -50ma 0-1-2 -3 -4 -5-6 -7-8 -9-10 -10v -0.7 -0.6 -0.4 -0.1 0 -0.2 -0.5 -0.3 v ds= -25v -50ma 10 v gs -gate source voltage (volts) temperature (c) ZVP0120A 3-407
typical characteristics transconductance v drain current i d - drain current (amps ) g fs - t ra n sc o ndu c t a nce (ms) 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 q-charge (nc) 0 v ds= -25v transconductance v gate-source voltage v gs -gate source voltage (volts) g f s -t ransconductance (ms) 0 0 -1-2-3-4-5-6-7-8-9-10 v ds= -25v 0 -10 -20 -30 v ds -drain source voltage (volts) capacitance v drain-source voltage c- ca pa c ita nce ( pf) c oss v g s -gate sourc e v oltage (v olts) gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 v ds = -50v i d=- 0.4a -100v -180v -40 -50 0.2 0.4 0.6 0.8 1.0 1.2 80 60 40 20 100 180 160 140 120 200 80 60 40 20 100 180 160 140 120 200 40 30 20 10 50 60 c iss c rss 70 80 90 100 110 1.4 1.6 1.8 2.0 2.2 2.4 ZVP0120A 3-408
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